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IXZ4DF12N100
RF Power MOSFET & DRIVER
Driver / MOSFET Combination DEIC-515 Driver combined with a DE375-102N12A MOSFET Gate driver matched to MOSFET
Features * Isolated Substrate - high isolation voltage (>2500V) - excellent thermal transfer - Increased temperature and power cycling capability * IXYS advanced Z-MOS process * Low RDS(on) * Very low insertion inductance (<2nH) * No beryllium oxide (BeO) or other hazardous materials * Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes * Latch-Up Protected * Low Quiescent Supply Current Advantages * Optimized for RF and high speed * Easy to mount--no insulators needed * High power density * Single package reduces size and heat sink area 1000 Volts 12 A 0.7 Ohms
Applications
* Class D or E Switching Amplifier * Multi MHz Switch Mode Power Supplies (SMPS)
Description
The IXZ4DF12N100 is a CMOS high speed high current gate driver and a MOSFET combination specifically designed Class D, E, HF, RF applications at up to 40MHz, as well as other applications. The IXZ4DF12N100 in pulse mode can provide 72A of peak current while producing voltage rise and fall times of less than 5ns, and minimum pulse widths of 8ns. The input of the driver is fully immune to latch up over the entire operating range. Designed with small internal delays, the IXZ4DF12N100 is suitable for higher power operation where combiners are used. Its features and wide safety margin in operating voltage and power make the IXZ4DF12N100 unmatched in performance and value. The IXZ4DF12N100 is packaged in DEIs low inductance RF package incorporating DEI's RF layout techniques to minimize stray lead inductances for optimum switching performance. The IXZ4DF12N100 is a surfacemountable device.
Figure 1. Functional Diagram
IXZ4DF12N100
RF Power MOSFET & DRIVER Device Specifications
Parameter
Maximum Junction Temperature Operating Temperature Range Weight
Value 150C - 40C to 85C 5.5g Test Conditions ID = 0.5IDM25 Maximum Ratings 40MHz 1000V 20V 50uA 1mA 12A 72A 12A TBD 500W 0.25 C/W TBD C/W Test Condition
VCC = 15V, ID = 0.5IDM25 Pulse Test, t 300 S, Duty Cycle 2%
Symbol fMAX VDSS VCC, VCCIN IDSS IDM25 IDM IAR PT (MOSFET and Driver) RthJC RthJHS Device Performance Symbol Rds(ON) VCC, VCCIN IN (Signal Input) VIH (High Input Voltage) VIL (Low Input Voltage) ZIN Cstray COSS tONDLY tOFFDLY tR tF
VDS = 0.8VDSS VGS = 0V
TJ = 25C TJ = 125C
TC = 25C TC = 25C, Pulse limited by TJM TC = 25C TC
= 25C
Minimum
Typical 0.7
Maximum
8V - 5V
VCCIN -2V
15V
20V VCCIN+0.3V VCCIN+0.3V
0.8V
f = 1MHz f = 1MHz Any one pin to the back plane metal VGS = 0V, VDS = 0.8VDSS(max) , f =1MHz
TC = 25C VCC, VCCIN , VIN = 15V 1 S Pulse, VDS= 50V, RL = 2.5
7960 46pf 150pf 20nS 22.6nS 3nS 4.5nS
TC = 25C VCC, VCCIN, VIN = 15V 1 S Pulse, VDS = 50V, RL = 2.5
IXZ4DF12N100
RF Power MOSFET & DRIVER
Fig. 2 Fig. 3
Extended Output Characteristics @ 25C
2.5
R DS(ON) vs. Temperature ID = 0.5IDM
50
R DS(ON) (Ohms)
40 ID (A) 30 20 10 0 0
V GS = V CC = 15V and 20V
2 1.5 1 0.5 0
V GS = V CC = 8V
50 V DS (V)
100
150
20
70
120
170
Temperature (C)
Fig. 4
25 23 21 19 17 15
Propagation Delay ON vs . Supply Voltage ID = 0.5IDM
Fig. 5
Propagation Delay OFF vs. Supply Voltage 28.5
Time (nS)
Time (nS)
28
27.5
5 10 15 V CC / V CCIN / IN (V) 20 25
5
10
15 VCC / VCCIN / IN (V)
20
25
Fig. 6
Propagation Delay ON vs.Temperature ID = 0.5 IDM, V CC / V CCIN / IN = 15V 19 18.5
Fig. 7
Propagation Delay OFF vs. Temperature ID = 0.5 IDM , VCC / VCCIN / IN = 15V
33 32 31
Time (nS)
Time (nS)
18 17.5 17 16.5 16 20 70 120 170
30 29 28 27 26 25 20 70 120 170
Temperature (C)
Temperature C
IXZ4DF12N100
RF Power MOSFET & DRIVER
Fig. 8
4.5 4
Rise Time vs. Supply Voltage ID = 0.5 IDM
Fig. 9
8 7
Fall Time vs. Supply Voltage ID = 0.5 IDM
Time (nS)
Time (nS)
3.5 3 2.5 2 1.5 5 10 15 20 25
6 5 4 3 2 5 10 15 20 25
VCC / VCCIN / IN (V)
VCC / VCCIN / IN (V)
Fig. 10
Rise Time vs. Temperature ID = 0.5 IDM , VCC / VCCIN / IN = 15V
Fig. 11
3
Fall Time vs. Temperature ID = 0.5 IDM , VCC / VCCIN / IN = 15V
2.5 2.4
2.5
Time (nS)
2.3 2.2 2.1 2 20 70 120 170
Time (nS)
2
1.5
1 20 70 120 170
Temperature (C)
Temperature (C)
Fig. 12
10,000
Output Capacitance vs. V DS Voltage
Fig. 13
10
VCC Supply Current vs. Frequency Driver Section
20V 15V 8 V
C a p a c ita n c e (p F )
1,000
VCC Current (A)
0 100 200 300 400 500 600 700 800 900 1000
1
100
0.1
10
0.01 0 10 20 30 40 50
V DS (V)
Frequency (MHz)
IXZ4DF12N100
RF Power MOSFET & DRIVER
Fig. 14
V CCIN Supply Current vs. Frequency Driver Section 10 VCCIN Current (A) 1 0.1 0.01 20V 15V 8V
0.001 0 10 20 30 40 50 Frequency (MHz)
Test Circuit
Fig. 15
VDD 4.7UF VCC 4.7UF + + 0.01u 0.01u 0.01u 0.01u 0.47u 0.47u
10UF 100V
+
VCC Source DGND INVCC
IN
L1 VCC 4.7UF + + 0.01u 0.01u 0.01u 0.01u CM Choke
IN Drain INGND
5 ohm 20W 1
DGND VCC Source
.01uF 2
4.7UF
0.47u
0.47u
Place all capacitors on VCC as close to the VCC lead as possible
IXZ4DF12N100
RF Power MOSFET & DRIVER
Lead Description
SYMBOL Drain Source VCC FUNCTION MOSFET Drain Drain of Power MOSFET. MOSFET Source DESCRIPTION
Source of Power MOSFET. This connection is common to DGND.
Power supply input for the driver output section. These leads provide power to the output Driver Section section of the DEIC515 driver. Both leads must be connected. Supply Voltage Input for the positive input section power-supply voltage. This lead provides power to the Input Section input section of the DEIC515 driver. This lead should not be directly connected to VCC. Supply Voltage Input Power Driver Ground Input Section Ground Input signal. The system ground leads. Internally connected to all circuitry, these leads provide ground reference for the entire chip. These leads should be connected to a low noise analog ground plane for optimum performance. The input section ground lead. This lead is a Kelvin connection internally connected to DGND. This lead must not be connected to DGND as excessive current can damage this lead.
VCCIN IN DGND
INGND
IXYS RF reserves the right to change limits, test conditions and dimensions without notice. IXYS RF MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 5,640,045 6,404,065 6,583,505 6,710,463 6,727,585 6,731,002
IXZ4DF12N100
RF Power MOSFET & DRIVER
Fig. 16 IXZ4DF12N100 Package Outline
IXYS RF An IXYS Company 2401 Research Blvd. Ste. 108, Ft. Collins, CO 80526 Tel: 970-493-1901; Fax: 970-493-1903 e-mail: deiinfo@directedenergy.com

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